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Contributors
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- Book:
- The Cambridge Dictionary of Philosophy
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- 05 August 2015
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- 27 April 2015, pp ix-xxx
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Six-Inch Diameter GaAs on Si Wafers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 116 / 1988
- Published online by Cambridge University Press:
- 28 February 2011, 117
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- 1988
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Epitaxial Growth of GaAs on 4-Inch Diameter Silicon Substrates by OMCVD.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 91 / 1987
- Published online by Cambridge University Press:
- 28 February 2011, 119
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- 1987
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Epitaxy Of GaAs on Si: MBE and OMCVD
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- Journal:
- MRS Online Proceedings Library Archive / Volume 91 / 1987
- Published online by Cambridge University Press:
- 28 February 2011, 33
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- 1987
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Electronic Properties of Grain Boundaries in GaAs: A Study of Oriented Bicrystals Prepared by Epitaxial Lateral Overgrowth
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- Journal:
- MRS Online Proceedings Library Archive / Volume 14 / 1982
- Published online by Cambridge University Press:
- 15 February 2011, 375
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- 1982
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Preparation of Oriented GaAs Bicrystal Layers by Vapor-Phase Epitaxy Using Lateral Overgrowth
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- Journal:
- MRS Online Proceedings Library Archive / Volume 5 / 1981
- Published online by Cambridge University Press:
- 15 February 2011, 77
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- 1981
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Scanning Cathodoluminescence Microscopy of Polycrystalline GaAs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 2 / 1980
- Published online by Cambridge University Press:
- 15 February 2011, 509
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- 1980
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